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CHA5093
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Gain & RLoss (dB) 25
Main Features
Performances : 22-26GHz 29dBm output power 20 dB 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm
20 15 10 5 0 -5 -10 -15 -20 -25 15 20 Frequency 25 30 S11 S22
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C Symbol
Fop G P1dB Id
Parameter
Operating frequency range Small signal gain Output power at 1dB gain compression Bias current
Min
22 18 28
Typ
Max
26
Unit
GHz dB dBm
20 29 600 900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50930129 -09 May-00 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
Electrical Characteristics
Tamb = +25C, Vd = 6V Symbol
Fop G G Is P1dB P03 IP3 PAE VSWRin
22-26GHz High Power Amplifier
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Pulsed output power at 1dB compression (1) Output power at 3dB gain compression 3rd order intercept point (2) Power added efficiency at 1dB comp. Input VSWR
Min
22 18
Typ
Max
26
Unit
GHz dB dB dB dBm dBm dBm %
20 1.5 50
28
29 29.5 40 19 2.3:1 2.3:1 170 600 900
VSWRout Output VSWR Tj Id Junction temperature for 80C backside Bias current
C mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Vgd Pin Ta Tstg
Parameter
Drain bias voltage Drain bias current Gate bias voltage Negative gate drain voltage ( = Vg - Vd) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Values
6 1200 -2.5 to +0.4 -8 +12 -40 to +80 -55 to +155
Unit
V mA V V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA50930129 -09 May-00
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +2V, Vg = -0.1V Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 dB -0,59 -0,38 -0,57 -0,92 -1,81 -3,56 -6,86 -11,49 -11,08 -7,5 -5,5 -4,65 -4,49 -4,54 -5,01 -5,95 -7,54 -10,08 -13,87 -18,32 -21,53 -13,29 -10,62 -12,11 -23,82 -11,02 -5,56 -3,27 -2,09 -1,33 -0,78 -0,62 -0,41 -0,4 -0,38 -0,37 -0,42 -0,6 -0,71 -0,75 S11 / 169,8 158,6 146,5 131,5 112,8 88,7 56,1 2 -75,8 -122,7 -150,3 -170,2 174,7 161,9 149 137,3 125,2 116,3 114,1 120,1 -166,1 -152,4 -174,2 161,8 -175,5 -104,7 -127,3 -144,5 -159,2 -170,7 178,1 168,3 159,5 151,3 144 136,5 129,1 121,2 114,6 106,8 S12 dB -83,89 -94,7 -90,83 -87,53 -91,02 -88,88 -93,06 -89,41 -77,69 -73,31 -67,65 -64,52 -60,09 -57,15 -54,69 -52,41 -54,05 -54,29 -53,07 -55,69 -55,41 -53,16 -56,67 -64,73 -61,49 -55,53 -53,1 -49,46 -49,07 -47,23 -47,06 -50,11 -55,89 -61,66 -66,3 -59,52 -57,63 -46,51 -45,63 -50,77 S12 / -9,2 -97,3 40,1 -65,9 -172,1 -109,5 -18,3 -123,6 -57,9 -105,8 -103,5 -128,8 -138,2 -165,4 165,9 131,9 103,3 99,6 70 61,4 49,3 28,6 -23,7 -101,8 109,9 89,3 73 59,2 21,2 2,2 -20,4 -56,1 -68,4 -95,4 -14,3 15,6 -6 1,1 -40,8 -87,7 S21 dB -51,47 -66,17 -62,89 -55,62 -54,96 -49,83 -45,68 -28,33 -13,56 -4,53 2,35 9,41 15,11 13,29 12,35 13,33 15,41 17,95 20,07 21,69 22,71 23,28 23,74 23,55 22,98 21,32 18,44 15,1 11,56 7,22 2,57 -2,99 -9,66 -22,01 -14,55 -14,65 -18,82 -23,23 -27,11 -29,94 S21 / 60 -14,6 156,2 -37,1 70,7 87,6 47 121,7 56,8 -7,7 -66,5 -125,1 147,6 74,3 33,4 -1,5 -38,2 -81,4 -128,3 179,9 128,5 77,4 24,1 -30,6 -88,4 -147 157,6 107,4 59,1 12,8 -29,9 -69,1 -104 -110,4 -69,1 -130,2 -168,4 162,3 137,4 111,9
CHA5093
S22 dB -0,31 -0,04 -0,04 -0,07 -0,08 -0,09 -0,1 -0,12 -0,2 -0,29 -0,45 -0,84 -1,9 -2,08 -2,48 -3,31 -4,38 -5,87 -7,16 -8,31 -9,09 -8,63 -8,36 -7,39 -6,07 -4,94 -4,11 -3,64 -3,14 -2,61 -2,29 -2,08 -1,96 -1,99 -1,86 -1,68 -1,73 -1,74 -1,8 -1,92
S22 / -10,4 -22,2 -33,3 -44,6 -55,8 -66,9 -78,2 -90 -102,3 -114,9 -128,5 -143,5 -157 -168,6 174,5 155,3 133,5 109,1 81 49 15,1 -13,6 -36,8 -53 -67,6 -82,5 -97 -109,9 -121,3 -131,9 -143,6 -154,5 -165,5 -175,4 175,9 164,4 153,9 143,6 132 121,4
Ref. : DSCHA50930129 -09 May-00
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
Typical on Wafer Measurements
Bias Conditions:
22-26GHz High Power Amplifier
Vd=2V, Vg= -0.2V, Id= 400mA
Gain & RLoss (dB) 25 20 15 10 5 0 -5 -10 -15 -20 -25 15 20 Frequency 25 30 S11 S22
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=580mA
Gain & Rloss. ( dB)
24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32
S11 S22
20
22
24
26
28
30
Frequency (GHz)
Ref. : DSCHA50930129 -09 May-00
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=600mA
CHA5093
30 28 26 24 Gain (dB) 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output power (dBm)
26GHz 24GHz 27GHz 22GHz
40 32 24 16 8 0 -8 -16 -24 -32 -40 -6
Freq= 24GHz
Output power (dBm)
3rd interm. (dBm)*
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Input power (dBm)
* It is a standard 2 tones measurement with an input signal F1 + F2, (F2 = F1 + 10MHz). The third order is measured at the 2F2-F1 frequency.
Ref. : DSCHA50930129 -09 May-00
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
22-26GHz High Power Amplifier
Chip Assembly and Mechanical Data
To Vg1,2,3 DC Gate supply feed
1nF
To Vd3 DC Drain supply feed
100pF 100pF
In
Out
100pF
100pF
To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA50930129 -09 May-00
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
Application note
CHA5093
The given DC Bias condition in table or curves are for optimum output power. To optimize the gain a drain voltage of 5V could be apply. With this biasing point , the output power at 1dB compression decreases by around 1dBm. The curves below show typical jig measurements versus drain & gate voltages.
24 22 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 28 30 Frequency (GHz)
Gain with Vd=5V, Vg=-0,4V Gain with Vd=5V, Vg=-0,2V Gain with Vd=6V, Vg=-0,4V
Ref. : DSCHA50930129 -09 May-00
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
22-26GHz High Power Amplifier
Ordering Information
Chip form : CHA5093-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA50930129 -09 May-00
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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